IXYS has been a leader in power semiconductor solutions for over 30 years. Their advanced MOSFETs and IGBTs are known for driving efficiency across applications, ensuring reliability and durability in renewable energy and automotive systems.

IXYS

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SMC Diode Solutions Co. Ltd.

Cambion

IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs|IGBT PT 600V 160A TO-247AD|750W 160A 600V TO-247-3 IGBTs ROHS|new, original packaged

IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs

Relay SSR DC-IN DC-OUT 4-Pin Power SIP Tube|SSR RELAY SPST-NC 3.25A 0-60V|REL MOSFET SIP4 SPNC 3.25A

Relay SSR DC-IN DC-OUT 4-Pin Power SIP Tube

PAA110 Series Dual SPST (1 Form A) 150 mA 400 V Solid State Relay SMT - DIP-8|Relay SSR 50mA 1.4V DC-IN 0.15A 400V AC/DC-OUT 8-Pin PDIP SMD T/R|SSR RELAY SPST-NO 150MA 0-400V|RELAY OPTOMOS 150MA DPST 8-SMD

PAA110 Series Dual SPST (1 Form A) 150 mA 400 V Solid State Relay SMT - DIP-8

Relay SSR 50mA 1.4V DC-IN 4A 60V DC-OUT 4-Pin Power SIP Tube|CPC1706 Series 4 A 60 V SPST Through Hole OptoMOS® DC Power Relay - SIP-4|Mosfet Relay, Spst-No, 4A, 60V, Tht; Contact Form:Spst-No (1 Form A); Load Type:Dc; Load Voltage Max:60V; Load Current:4A; Mosfet Relay Package Style:Sip-8 (4-Pin Us

Relay SSR 50mA 1.4V DC-IN 4A 60V DC-OUT 4-Pin Power SIP Tube

IXGA48N60A3 Series 600 V 120 A Surface Mount GenX3TM IGBT - TO-263AA|Trans IGBT Chip N-CH 600V 48A 300mW 3-Pin(2+Tab) D2PAK|IGBT PT 600V 120A TO-263AA|IGBT 600V 120A 300W TO263AA

IXGA48N60A3 Series 600 V 120 A Surface Mount GenX3TM IGBT - TO-263AA

LDA102 Series 3750 Vrms Single Transistor Uni-directional Optocoupler - SDIP-6|OPTOCOUPLER W/SNGL DAR TRANS|OPTOISO 3.75KV TRANS W/BASE 6SMD

LDA102 Series 3750 Vrms Single Transistor Uni-directional Optocoupler - SDIP-6

Rectifier Diode, 1 Phase, 2 Element, 96A, 600V V(RRM), Silicon|Rectifier Diode Switching 600V 96A 80ns 4-Pin SOT-227B Tube|DSEI Series 600 Vrrm 2 X 96 A 1.25 Vf Epitaxial Diode - SOT-227B|DIODE, FAST, 2X96A; Repetitive Reverse Voltage Vrrm Max: 600V; Forward Current If(AV): 96A; Forward Voltage VF M

Rectifier Diode, 1 Phase, 2 Element, 96A, 600V V(RRM), Silicon

Trans IGBT Chip N-CH 3000V 30A 160000mW 3-Pin(3+Tab) TO-247AD|IXBH12N300: 3000 V 30 A 160 W Monolithic Bipolar MOS Transistor TO-247-3|FUSE BRD MNT 1.5A 125VAC/VDC SMD|HIGH VOLTAGE, HIGH GAIN BIMOSFET MONOLITHIC BIPOLAR MOS TRANSISTOR Insulated Gate Bipolar Transistor, 30A I(C), 3000V V(BR)CES, N-Ch

Trans IGBT Chip N-CH 3000V 30A 160000mW 3-Pin(3+Tab) TO-247AD

Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247|IGBT PT 1200V 40A TO-247AD|Contact for details|IGBT,1200V,20A,TO-247; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temper

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