MPN
JANS2N3501
Total Available Quantity
-
Specifications
Lifecycle Status
Production
Mount
Through Hole
Case/Package
TO-39
Number of Pins
3
Packaging
Bulk
Max Collector Current
300mA
Collector Emitter Breakdown Voltage
150V
Collector Base Voltage (VCBO)
150V
Collector Emitter Voltage (VCEO)
400mV
Min Operating Temperature
-55°C
Max Operating Temperature
200°C
RoHS
Compliant
Max Power Dissipation
1W
Radiation Hardening
No
Schedule B
8541210080
About This Product
The Microchip Trans GP BJT NPN is a reliable and efficient bipolar junction transistor designed for high-voltage applications. With a collector-emitter breakdown voltage of 150V and a maximum collector current of 300mA, this transistor is ideal for various electronic circuits requiring robust performance. Packaged in a compact TO-39 case, it ensures easy integration into through-hole designs while maintaining high thermal stability with a maximum operating temperature of 200°C. This component is perfect for engineers seeking a dependable solution for their electronic projects.
MPN
JANS2N3501
Total Available Quantity
-
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