MPN
NTZD3152PT1G
Manufacturer
Description
Dual P-Channel Small Signal MOSFET with ESD Protection -20V, -430mA, 900mΩ
MPN
NTZD3152PT1G
Total Available Quantity
-
Main Attributes
Lifecycle Status
Production
Packaging
Tape & Reel
Specifications
Case/Package
SOT-563
Number of Pins
6
Gate to Source Voltage (Vgs)
6V
Drain to Source Voltage (Vdss)
20V
Drain to Source Breakdown Voltage
20V
Continuous Drain Current (ID)
430mA
Drain to Source Resistance
1O
Power Dissipation
250mW
Input Capacitance
175pF
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
RoHS
Compliant
Current Rating
430mA
Element Configuration
Dual
Fall Time
12ns
Height
600µm
Lead Free
Lead Free
Length
1.7mm
Manufacturer Lifecycle Status
Production
Max Power Dissipation
250mW
Number of Elements
2
Radiation Hardening
No
Rds On Max
900mO
Resistance
500mO
Rise Time
12ns
Schedule B
8541210080
Turn-Off Delay Time
35ns
Turn-On Delay Time
10ns
Voltage Rating (DC)
20V
Width
1.3mm
MPN
NTZD3152PT1G
Total Available Quantity
-
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