MPN
L14G1
Manufacturer
Description
Phototransistor Chip Silicon NPN Transistor 940nm 3-Pin TO-18 Bulk
MPN
L14G1
Total Available Quantity
-
Specifications
Mount
Through Hole
Case/Package
TO-18
Number of Pins
3
Packaging
Bulk
Collector Emitter Voltage (VCEO)
45V
Collector Emitter Breakdown Voltage
45V
Max Collector Current
1mA
Viewing Angle
20°
Orientation
Top View
Rise Time
8µs
Wavelength
940nm
Power Dissipation
600mW
Dark Current
100nA
Min Operating Temperature
-65°C
Max Operating Temperature
125°C
RoHS
Compliant
Breakdown Voltage
45V
Current Rating
1mA
Lead Free
Lead Free
Max Breakdown Voltage
45V
Max Power Dissipation
300mW
Number of Elements
1
Polarity
NPN
Power Consumption
300mW
REACH SVHC
No
Voltage Rating (DC)
45V
About This Product
The On Semiconductor Phototransistor Chip is a high-performance NPN transistor designed for optimal light detection at a wavelength of 940nm. Encased in a compact TO-18 package, this phototransistor is ideal for applications requiring precise light sensing and low power consumption. With a maximum collector current of 1mA and a breakdown voltage of 45V, it operates efficiently across a wide temperature range from -65°C to 125°C. This component is perfect for various electronic applications, ensuring reliable performance and compliance with RoHS standards.
MPN
L14G1
Total Available Quantity
-
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