Description
General Purpose Rectifier Diode, 1 Phase, 1 Element, 0.2A, 250V V(RRM), Silicon, TO-236AB
Forward Voltage
1.25V
Reverse Recovery Time
50ns
Max Repetitive Reverse Voltage (Vrrm)
250V
Datasheet
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  • Maximum Repetitive Reverse Voltage: 250V
  • Forward Current Rating: 200mA
  • Max Forward Surge Current: 9A
  • Compact SOT-23 Package
  • Max Operating Temperature: 150°C
  • Reverse Recovery Time: 50ns

The NXP Semiconductors General Purpose Rectifier Diode is designed for efficient rectification in various electronic applications. This silicon diode features a compact SOT-23 package and is optimized for performance with a maximum repetitive reverse voltage of 250V. With a forward current rating of 200mA and a maximum forward surge current of 9A, it is suitable for a wide range of power management tasks. Its robust design ensures reliable operation even at high temperatures, making it an ideal choice for both consumer and industrial electronics.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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