Discrete Semiconductors

Transistors

BJTs

Semiconductors

NXP Semiconductors

Collector Emitter Breakdown Voltage

Collector Emitter Voltage (VCEO)

Max Operating Temperature

Max Power Dissipation

Number of Pins

Packaging

Polarity

REACH SVHC

RoHS

Transition Frequency

Bipolar - RF Transistor, PNP, 15 V, 5 GHz, 300 mW, -25 mA, 50|TRANSISTOR UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP RF Small Signal|Trans GP BJT PNP 15V 0.025A 3-Pin TO-236AB|TRANSISTOR, PNP, 5GHZ, SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)

Bipolar - RF Transistor, PNP, 15 V, 5 GHz, 300 mW, -25 mA, 50

The NXP Semiconductors Bipolar RF Transistor is a high-performance PNP transistor designed for RF applications requiring reliable operation at frequencies up to 5 GHz. With a collector-emitter breakdown voltage of 15 V and a maximum power dissipation of 300 mW, this transistor is ideal for various communication and signal processing applications. Packaged in a convenient tape and reel format, it ensures ease of handling and integration into your designs, while its robust thermal performance allows operation at temperatures up to 175°C.

BFT92