MPN
1N5806US
Manufacturer
Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 150V V(RRM), Silicon
MPN
1N5806US
Total Available Quantity
-
Specifications
Average Rectified Current
1A
Capacitance
25pF
Case/Package
MELF
Contact Plating
Lead, Tin
Element Configuration
Single
Forward Current
1A
Forward Voltage
975mV
Height
2.62mm
Lead Free
Contains Lead
Lifecycle Status
Production
Max Forward Surge Current (Ifsm)
35A
Max Junction Temperature (Tj)
175°C
Max Operating Temperature
175°C
Max Repetitive Reverse Voltage (Vrrm)
150V
Max Reverse Voltage (DC)
150V
Min Operating Temperature
-65°C
Mount
Surface Mount
Number of Pins
2
Packaging
Bulk
Peak Non-Repetitive Surge Current
35A
Peak Reverse Current
1µA
Radiation Hardening
Yes
Reverse Recovery Time
25ns
RoHS
Compliant
Schedule B
8541100080
MPN
1N5806US
Total Available Quantity
-
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