BFU660F,115
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- High Gain of 27 dB
- Transition Frequency of 21 GHz
- Surface Mount Configuration
- Max Collector Current of 60 mA
- Operating Temperature Range: -65°C to 150°C
The NXP Semiconductors BFU660 Series is a high-performance NPN wideband silicon RF transistor designed for applications requiring exceptional gain and frequency response. With a compact SOT-343F-4 package, this transistor operates efficiently at a maximum collector current of 60mA and delivers a gain of 27 dB. Its impressive transition frequency of 21GHz makes it suitable for a variety of RF applications, ensuring reliable performance in demanding environments.
The BFU660 Series is commonly used in high-frequency applications such as RF amplifiers, oscillators, and mixers, thanks to its wide bandwidth and high gain features. With a maximum collector current of 60mA and a transition frequency of 21GHz, it is ideal for telecommunication and consumer electronics industries. This NPN silicon RF transistor is suitable for surface mount applications, making it a preferred choice among engineers and designers for compact circuit solutions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.