BAS4007E6327HTSA1
- Description
- Rectifier Diode, Schottky, 2 Element, 0.12A, 40V V(RRM), Silicon
- Forward Voltage
- 1V
- Average Rectified Current
- 120mA
- Reverse Recovery Time
- 100ps
- Max Repetitive Reverse Voltage (Vrrm)
- 40V
- Datasheet
Quantity
6,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Dual-element silicon Schottky rectifier diode
- 40V maximum repetitive reverse voltage (VRRM)
- 120mA average rectified forward current
- Fast 100ps reverse recovery time
- 250mW maximum power dissipation, 5pF capacitance
- Surface-mount SOT package, 4 pins, -55°C to 125°C
The Infineon BAS4007E6327HTSA1 is a silicon Schottky rectifier diode in a dual (two-element) configuration. It is rated for a maximum repetitive reverse voltage of 40V and an average rectified forward current of 120mA, with a forward voltage of about 1V. This surface-mount SOT-package device offers fast switching with a reverse recovery time of roughly 100ps.
The BAS4007E6327HTSA1 is used for low-current rectification, signal switching, and steering in compact electronic circuits where fast recovery and low forward voltage are beneficial. Its dual-diode configuration suits small-signal and protection functions on densely populated boards. Circuit and hardware designers working on consumer, industrial, and communications electronics are the typical users.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
6,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.