2N7002DWH6327XTSA1
- Description
- MOSFET 2N-CH 60V 0.3A SOT363 MOSFET Array 60V 300mA 500mW Surface Mount PG-SOT363-PO
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 300mA
- Drain to Source Resistance
- 3Ω
- Input Capacitance
- 13pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
998 AvailableNeed this part?
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- Dual N-channel MOSFET (2 channels)
- 60V drain-to-source voltage (Vdss)
- 300mA continuous drain current
- 3 ohm on-resistance (Rds(on))
- 500mW power dissipation, 20V Vgs
- 6-pin SOT-363 package, -55°C to 150°C
The Infineon 2N7002DWH6327XTSA1 is a dual N-channel MOSFET array in a 6-pin SOT-363 package. Each channel is rated for 60V drain-to-source (Vdss), 300mA continuous drain current, and 3 ohm on-resistance, with 500mW power dissipation and a 20V gate-source rating.
Dual small-signal N-channel MOSFETs like the 2N7002DWH6327XTSA1 handle low-power switching, level shifting, and load or gate driving in digital and analog circuits. Combining two devices in a SOT-363 saves board space in dense designs. They are widely used in consumer, computing, and industrial electronics.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
998 AvailableNeed this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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