2N7002DWH6327XTSA1
- Description
- MOSFET 2N-CH 60V 0.3A SOT363 MOSFET Array 60V 300mA 500mW Surface Mount PG-SOT363-PO
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 300mA
- Drain to Source Resistance
- 3Ω
- Input Capacitance
- 13pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
998 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Dual N-channel configuration for versatile applications
- Drain to Source Voltage: 60V
- Continuous Drain Current: 115mA
- Low On-State Resistance: 3Ω
- Fast Switching Times: Rise Time 3.3ns Fall Time 3.1ns
- Lead-Free & RoHS Compliant
The Infineon Transistor MOSFET Array is a dual N-channel device designed for efficient switching applications. With a compact SOT-363 package, this MOSFET array operates at a drain to source voltage of 60V and supports continuous drain currents up to 115mA. Its low on-state resistance and fast switching times make it an ideal choice for various electronic circuits requiring reliable performance in a small footprint.
The Transistor MOSFET Array Dual N-CH 60V 0.3A is a versatile electronic component that can be used in various applications such as amplifiers, switches, and power management circuits. With its dual N-Channel design, 60V voltage rating, and 115mA continuous drain current, this MOSFET array provides reliable performance in a compact SOT-363 package. Whether you’re designing consumer electronics, automotive systems, or industrial equipment, this Transistor MOSFET Array is a reliable choice for your electronic circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
998 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.