SI4288DY-T1-GE3

• Dual N-Channel configuration, Two Channels in One Package
• 40V Drain-Source Voltage and Breakdown Voltage
• 9.2A Continuous Drain current, 20 Milliohm Maximum on-Resistance
• 1.2V Gate Threshold voltage, 20V Gate-Source Rating
• 580pF Input capacitance, 7ns Turn-on and 16ns Turn-Off Delay
• 8-Pin SO Surface-Mount package, -55C to 150C

The SI4288DY-T1-GE3 from Vishay is a dual N-channel MOSFET array carrying two independent channels in a single 8-pin SO package. Each recorded rating covers 40V drain-source, 9.2A continuous drain current and a 20 milliohm maximum on-resistance, with a 1.2V gate threshold and a 580pF input capacitance. The SI4288DY-T1-GE3 is lead free and RoHS compliant and ships on tape and reel in quantities of 2, 500.

Dual N-channel MOSFETs in an SO-8 footprint are used where two switches are needed in a small area: synchronous buck converter high-side and low-side pairs, load switching and power sequencing, battery protection circuits and motor-drive half-bridges in portable and computing hardware. The low 1.2V gate threshold makes the part drivable directly from 2.5V and 3.3V logic-level gate drivers. The attribute set records both a 3.1W maximum power dissipation and a separate 2W figure; the explicit maximum is published here, and the per-channel versus total-package basis should be confirmed against the Vishay datasheet. This part is flagged as containing a REACH SVHC substance.