UPD444008LLE-A12-A

Description
SRAM Chip Async Single 3.3V 4M-bit 512K x 8 12ns 36-Pin SOJ
Memory Technology
CMOS
Access Time
12ns
Datasheet
NEC Corporation UPD444008LLE-A12-A product image

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  • High Density: 4M-bit (512K x 8)
  • Fast Access Time: 12ns
  • Operating Supply Voltage: 3.3V
  • Compact 36-Pin SOJ Package
  • Asynchronous Operation for Simplified Design
  • RoHS Compliant for Environmental Safety
  • Wide Operating Temperature Range (0°C to 70°C)

The NEC Corporation SRAM Chip is a high-performance asynchronous memory solution designed for applications requiring fast access times and reliable data storage. With a density of 4M-bit and a swift access time of 12ns, this chip is ideal for a variety of electronic devices. Its compact 36-pin SOJ package ensures easy integration into surface mount applications, while its operational voltage of 3.3V makes it suitable for modern low-power designs. This SRAM chip operates efficiently within a temperature range of 0°C to 70°C, making it a versatile choice for both consumer and industrial electronics.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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