MB85RC512TPNF-G-JNERE1
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- Non-Volatile Memory Technology
- Asynchronous Operation for Fast Data Access
- Wide Voltage Range: 1.8V to 3.6V
- 512Kb Storage Capacity
- Compact SOP-8_150mil Package
The Fujitsu 1.8V ~ 3.6V I2C 512Kb Non-Volatile FRAM is a cutting-edge memory solution designed for applications requiring fast and reliable data storage. This 64K x 8 memory device offers the advantages of non-volatility with the speed of RAM, making it ideal for a variety of electronic applications. Housed in a compact SOP-8_150mil package, it ensures efficient space utilization while delivering high performance in data retention and access times.
This FRAM (Ferroelectric Random Access Memory) provides high-speed, non-volatile data storage solutions ideal for applications requiring fast write performance and endurance. Common use cases include data logging, smart meters, and microcontroller-based systems where retention of information is critical during power loss. Engineers and developers in consumer electronics and industrial automation frequently utilize this component for its reliability and efficiency.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.