JAN2N918

Description
Trans RF BJT NPN 15V 0.05A 200mW 4-Pin TO-72 Bag
Collector Emitter Voltage (VCEO)
15V
Datasheet
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  • Max Collector Current: 50mA
  • Collector Emitter Voltage (VCEO): 15V
  • Max Power Dissipation: 200mW
  • Wide Operating Temperature Range (-65°C to 200°C)
  • 4-Pin TO-72 Package for Easy Through Hole Mounting
  • Lifecycle Status: Production

The Microchip Trans RF BJT NPN is a versatile and reliable bipolar junction transistor designed for various electronic applications. With a maximum collector current of 50mA and a collector-emitter voltage rating of 15V, this component is ideal for low-power amplification and switching tasks. Its robust design ensures operation in extreme conditions, with a maximum operating temperature of 200°C and a minimum of -65°C. Packaged in a convenient 4-pin TO-72 format, this transistor is perfect for through-hole mounting in a wide range of projects.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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