MPN
IXBT6N170
Manufacturer
Description
High Voltage Series - 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs, TO-268, RoHS
MPN
IXBT6N170
Total Available Quantity
-
Main Attributes
Continuous Collector Current
12A
Collector Emitter Saturation Voltage
2.84V
Collector Emitter Voltage (VCEO)
1.7kV
Max Junction Temperature (Tj)
150°C
Specifications
Lifecycle Status
Production
Case/Package
TO-268
Collector Emitter Breakdown Voltage
1.7kV
Power Dissipation
75W
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Height
5.35mm
Turn-Off Delay Time
105ns
Turn-On Delay Time
32ns
MPN
IXBT6N170
Total Available Quantity
-
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