FM25V05-GTR

• 512Kb density, Equivalent to 64kB of FRAM Storage
• Serial Interface at Up to 40M Hz
• 9ns Access time, 8-Bit Word Size and Data Bus Width
• 2.7V to 3.6V supply, 3.3V nominal, 3mA Nominal Supply Current
• 8-Pin SOIC Surface-Mount package, Tape and Reel
• -40°C to 85°C Operating range, Lead Free and RoHS Compliant

The FM25V05-GTR is an Infineon ferroelectric RAM device with 512Kb of density, equivalent to 64kB, in an 8-pin SOIC package. It uses a serial interface running at up to 40M Hz with an 8-bit word size and a 9ns access time. The FM25V05-GTR operates from a 2.7V to 3.6V supply with a 3.3V nominal rail, drawing 3mA, and is rated for -40°C to 85°C.

Ferroelectric RAM is non-volatile memory that writes at bus speed with no erase cycle and no write delay, and offers write endurance orders of magnitude beyond EEPROM or Flash. That combination makes it the standard choice for data logging, event and fault recording, energy and utility meters, and any application that must capture state continuously or preserve it through an unexpected power loss. Designers also use it where a Flash device would wear out, such as counters and frequently updated calibration or configuration tables. Buyers are industrial, metering, medical and automotive engineers who need frequently written non-volatile storage that behaves like RAM.