FM25V20A-GTR

• 2Mb FRAM density, Organised 256K X 8, 8-Bit Data Bus
• SPI Serial interface, 3.3V Operating Supply
• Non-Volatile with RAM-Like Byte writes, No Block Erase Required
• Effectively Unlimited Write Endurance Compared with Flash Memory
• 8-Pin SOIC Surface-Mount package, Tape and Reel
• -40°C to 85°C Operating temperature, RoHS Compliant

The FM25V20A-GTR is an Infineon 2Mb ferroelectric RAM (FRAM) in an 8-pin SOIC package, supplied on tape and reel. It is organised as 256K x 8 on an 8-bit data bus and is accessed over an SPI serial interface from a 3.3V supply. FRAM combines the non-volatility of flash with the fast, symmetric, byte-level write behaviour of RAM, requiring no erase cycle. The FM25V20A-GTR is rated for -40°C to 85°C.

FRAM is specified where data must survive power loss and be written constantly, a combination that wears out EEPROM and flash. The FM25V20A-GTR is used for event and fault logging, utility and energy meter registers, machine state and counter retention in industrial controllers, configuration storage that changes frequently, and black-box data capture where the last write must complete before the rail collapses. Byte-level writes with no erase cycle mean firmware can treat it like RAM that happens to persist. Buyers are typically metering, industrial automation, medical device and automotive designers whose write patterns rule out conventional non-volatile memory.