IS66WVE2M16EALL-70BLI

Description
Cellular RAM Pseudo SRAM, 2Mx16, 1.7 to 1.95V, 70ns, TFBGA-48
Memory Type
PSRAM
Datasheet
ISSI IS66WVE2M16EALL-70BLI product image

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  • High-Speed Access Time of 70ns
  • Operating Voltage Range: 1.7V to 1.95V
  • Compact TFBGA-48 Package for Space-Saving Designs
  • Wide Operating Temperature Range (-40°C to 85°C)
  • RoHS Compliant for Environmental Safety
  • Surface Mount Technology for Easy Integration

The ISSI Cellular RAM Pseudo SRAM, 2Mx16, is a high-performance memory solution designed for applications requiring fast and reliable data storage. Operating within a voltage range of 1.7 to 1.95V and featuring a 70ns access time, this RAM component is ideal for a variety of electronic devices. Housed in a compact TFBGA-48 package, it supports parallel interfacing and is suitable for surface mount applications. With a robust operating temperature range from -40°C to 85°C, this memory solution is perfect for both commercial and industrial environments, ensuring consistent performance under demanding conditions.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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