TC58NVG2S0HBAI4

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- High Capacity of 4294967296 bits
- Operating Voltage of 2.7V
- Compact TFBGA Package for Space-Saving Designs
- Wide Temperature Range from -40°C to 85°C
- Lead-Free & RoHS Compliant
The Kioxia Active BALL 2005 is a cutting-edge parallel memory solution designed for high-performance applications. With a memory capacity of 4294967296 bits, this EEPROM NAND memory operates efficiently at a voltage of 2.7V. Its compact 9mm TFBGA package ensures easy integration into various electronic systems while maintaining reliability across a wide temperature range from -40°C to 85°C. This memory component is RoHS compliant, making it an environmentally friendly choice for modern electronic designs.
The Active BALL 2005 Parallel Memory is used for high-performance data storage and retrieval in electronic devices, providing 4 Gbit of NAND flash memory with compatibility for EEPROM applications. It operates within a temperature range from -40°C to 85°C, making it suitable for various environments. This memory is ideal for applications requiring fast parallel interface connections in compact form factors, such as smartphones, tablets, and embedded systems.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.