AS4C32M16SB-7BINTR

Description
DRAM Chip SDRAM 512M-bit 32Mx16 3.3V 54-Pin TSOP-II T/R
Memory Technology
SDR
Alliance Memory AS4C32M16SB-7BINTR product image

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  • 512M-bit Capacity with 32Mx16 Configuration
  • 3.3V Operating Voltage for Energy Efficiency
  • Compact 54-Pin TSOP-II Package
  • High-Speed Data Access for Enhanced Performance

The Alliance Memory DRAM Chip SDRAM 512M-bit is a high-performance memory solution designed for a variety of applications requiring efficient data storage and retrieval. With a configuration of 32Mx16, this chip operates at a voltage of 3.3V and comes in a compact 54-Pin TSOP-II package, making it an ideal choice for space-constrained designs. Engineered for reliability and speed, this SDRAM chip ensures optimal performance in both consumer electronics and industrial applications.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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