TC58BVG0S3HTA00

• 1Gb SLC NAND Flash density, Organized 128M X 8
• Single-Level Cell Architecture for High Endurance and Data Retention
• 25 Ns Access Time
• Supply Range of 2.7 V to 3.6 V, 3.3 V Nominal
• 48-Pin TSOP-I (TFSOP) Surface-Mount Package
• Operating Temperature Range of 0 C to 70 C, RoHS Compliant

The TC58BVG0S3HTA00 is a Kioxia 1Gb SLC NAND flash memory device organized as 128M x 8, with a 25 ns access time. SLC NAND stores one bit per cell, which gives it markedly higher write endurance and better data retention than MLC or TLC flash, at a higher cost per bit. The TC58BVG0S3HTA00 operates from 2.7 V to 3.6 V, nominally 3.3 V, and is supplied in a 48-pin TSOP-I (TFSOP) package.

Small-density SLC NAND is used for code and configuration storage rather than bulk data: boot firmware, FPGA bitstreams, operating system images and logging in systems that write frequently over a long service life. Designers choose SLC parts like the TC58BVG0S3HTA00 where a failed write or a retention error would take the product out of service, which is why they persist in networking equipment, industrial controllers, set-top boxes, printers and telecom line cards. The TSOP package is a mature, easily inspected outline favoured in industrial assembly over fine-pitch BGA. Embedded designers and industrial equipment manufacturers with long product lifecycles are the main buyers.