IS61WV25616BLL-10TLI
- Description
- 256K X 16 High Speed Asynchronous Cmos Static Ram Standard SRAM, 256KX16, 10NS, Cmos, PDSO44
- Memory Technology
- SDR
- Memory Type
- SRAM
- Data Bus Width
- 16b
- Memory Size
- 512kB
- Access Time
- 10ns
- Datasheet
Quantity
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- High Density 4Mb SRAM Memory
- Fast Access Time of 10ns
- Operating Supply Voltage of 3.3V
- Wide Temperature Range from -40°C to 85°C
- Single Port Asynchronous Interface
The ISSI SDR 512kB x 16 is a high-performance SRAM memory component designed for applications requiring fast data access and reliability. With a density of 4Mb and an access time of just 10ns, this memory solution is ideal for a variety of electronic devices. Housed in a compact TSOP-44 package, it operates efficiently within a temperature range of -40°C to 85°C, making it suitable for both industrial and consumer applications.
The SRAM Chip is designed for use in a variety of electronic devices where fast and reliable memory is needed. With a memory size of 4Mbit and access time of 10ns, it supports asynchronous operation, making it suitable for applications requiring quick data retrieval. It operates on supply voltages of 2.4V to 3.6V and is encapsulated in a TSOP-II package, which makes it ideal for surface mount technology in compact devices. Its specifications, including a data bus width of 16 bits and operating temperature range of -40°C to 85°C, allow it to perform well in various environmental conditions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.