UCC21710QDWRQ1
- Description
- Gate Driver Single Channel for SiC/IGBT 10A 5.7kV 16-Pin SOIC T/R
- Datasheet
Quantity
20,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- High Output Current Capability 10A
- High Voltage Rating 5.7kV
- Compact 16-Pin SOIC Package
- Optimized for SiC and IGBT Applications
The Texas Instruments Gate Driver Single Channel for SiC/IGBT is designed to deliver exceptional performance in high-voltage applications. With a robust output capability of 10A and a voltage rating of 5.7kV, this driver is ideal for driving silicon carbide and insulated gate bipolar transistors. Its compact 16-pin SOIC package ensures easy integration into various designs while maintaining high efficiency and reliability.
The Gate Driver Single Channel for SiC/IGBT is designed to drive high-voltage IGBT and SiC transistors efficiently in power electronics applications. It is commonly used in industrial motor drives, renewable energy systems, and power inverters, providing high output current and voltage levels. Engineers and designers of power semiconductor systems utilize this component for its reliability and performance in demanding applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
20,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.