IDH12G65C6XKSA1
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- High Voltage Rating: 650 V
- Forward Current: 27 A
- Power Dissipation: 81 W
- Through Hole TO-220-2 Package
- Package Quantity: 500
The Infineon IDH12G65C6 is a high-performance 650 V 27 A through hole SiC Schottky diode designed for demanding applications requiring high efficiency and reliability. This diode is ideal for power conversion and switching applications, providing superior thermal performance and low forward voltage drop. Housed in a TO-220-2 package, it is suitable for various industrial and consumer electronics applications.
The IDH12G65C6 Series Schottky Diode is designed for high-performance applications requiring efficient power conversion. With a forward current capability of 27A and a voltage rating of 650V, it is ideal for use in industrial power supplies, DC-DC converters, and renewable energy systems. Engineers and designers in the electronics field utilize this diode for its low power loss and high thermal efficiency.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.