IKP20N65H5XKSA1

Description
Trans IGBT Chip N-CH 650V 42A 125000mW Automotive 3-Pin(3+Tab) TO-220 Tube
Max Power Dissipation
125W
Datasheet
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  • High Voltage Rating: 650V
  • Maximum Current: 42A
  • Power Dissipation: 125W
  • Wide Operating Temperature Range (-40°C to 175°C)
  • 3-Pin TO-220 Package for Easy Mounting
  • Halogen Free and Lead Free
  • RoHS Compliant
  • Available in Tube Packaging (500 units)

The Infineon Trans IGBT Chip N-CH 650V 42A is a robust and efficient power semiconductor designed for automotive applications. With a maximum operating temperature of 175°C and a power dissipation capability of 125W, this IGBT ensures reliable performance in demanding environments. Packaged in a TO-220 case with three pins, it is suitable for through-hole mounting, making it an ideal choice for various automotive power management systems. This component is halogen-free, lead-free, and compliant with RoHS standards, ensuring it meets modern environmental regulations.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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