IRGP4068DPBF

Description
Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AD Tube
Collector Emitter Saturation Voltage
1.65V
Collector Emitter Voltage (VCEO)
2.14V
Max Power Dissipation
330W
Datasheet
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  • High Collector Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 96A
  • Power Dissipation: 330W
  • Compact TO-247AD Package
  • Wide Operating Temperature Range: -55°C to 175°C

The Infineon Trans IGBT Chip N-CH is a powerful electronic component designed for high-efficiency applications requiring robust performance. With a collector emitter breakdown voltage of 600V and a maximum collector current of 96A, this IGBT chip is ideal for demanding power conversion tasks. Its TO-247AD package ensures easy integration into various systems, making it a reliable choice for engineers and designers in the field of power electronics.

The Trans IGBT Chip is primarily used in high-power applications such as motor drives, industrial automation, and renewable energy systems. It provides excellent efficiency and reliability for switching and amplifying electronic signals. Engineers and manufacturers in the power electronics field utilize this chip for its robust performance characteristics and capability to handle substantial voltage and current levels.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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