IRFH5300TRPBF

• Drain to Source Voltage: 30V
• Continuous Drain Current: 40A
• Low On-State Resistance: 1.4mΩ
• Fast Switching Times: Rise Time 30ns and Fall Time 13ns
• Wide Operating Temperature Range: -55°C to 150°C

The Infineon 30V Single N-Channel HEXFET Power MOSFET is designed for high-efficiency power management applications. Housed in a compact 5mm x 6mm PQFN package, this MOSFET delivers exceptional performance with a continuous drain current of 40A and a low on-state resistance. Its robust design ensures reliable operation in demanding environments, making it an ideal choice for various electronic applications.

The 30V Single N-Channel HEXFET Power MOSFET is designed for high-efficiency power management in a variety of electronic applications, including power supplies, motor control, and audio amplifiers. With its low on-resistance and high continuous drain current capabilities, this MOSFET is ideal for use in compact, high-performance devices. It is commonly employed by engineers and designers seeking reliable components for demanding power applications.