IRFR8314TRPBF
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- Drain to Source Voltage: 30V
- Continuous Drain Current: 90A
- On-State Resistance: 2.2mΩ
- Fast Switching Times: Rise Time 98ns Fall Time 30ns
- Wide Operating Temperature Range: -55°C to 175°C
- Lead-Free & RoHS Compliant
The Infineon 30V Single N-Channel HEXFET Power MOSFET is designed for high-efficiency power management applications. This robust component is housed in a D-Pak package, ensuring optimal thermal performance and reliability. With a continuous drain current rating of 90A and a maximum power dissipation of 125W, it is ideal for demanding electronic circuits. The device features low on-state resistance and fast switching times, making it suitable for various applications in power electronics.
The 30V Single N-Channel HEXFET Power MOSFET is commonly used in power management applications, such as motor drivers, power supplies, and DC-DC converters. Its high continuous drain current of 90A and low on-state resistance make it ideal for efficient switching and amplification in various electronic circuits. This component is typically employed by engineers and designers in industries requiring reliable power solutions, including automotive and consumer electronics.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.