IRFP4368PBF
- Description
- IRFP4368PBF N-channel MOSFET Transistor, 350 A, 75 V, 3-Pin TO-247AC
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 75V
- Continuous Drain Current (ID)
- 350A
- Drain to Source Resistance
- 1.46mΩ
- Input Capacitance
- 19.23nF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- Continuous Drain Current: 350A
- Drain to Source Voltage: 75V
- Low On-State Resistance: 1.85mΩ
- High Power Dissipation: 520W
- Fast Switching Times: Rise Time 220ns Fall Time 260ns
The Infineon IRFP4368PBF is a powerful N-channel MOSFET transistor designed for high-efficiency applications. With a continuous drain current rating of 350 A and a drain to source voltage of 75 V, this transistor is ideal for demanding power management tasks. Housed in a robust 3-pin TO-247AC package, it ensures reliable performance in various electronic circuits. Its low on-state resistance and high power dissipation capability make it suitable for applications requiring high current handling and thermal management.
The IRFP4368PBF is commonly used in high-power applications such as power inverters, motor drives, and power management systems. With a high continuous drain current of 350A and a breakdown voltage of 75V, it is ideal for demanding electronic circuits requiring efficient switching and thermal management. Engineers and designers in the power electronics industry often utilize this MOSFET transistor for reliable performance in challenging environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.