IRFP90N20DPBF
- Description
- MOSFET, Power; N-ch; Vdss 200V; Rds(on) 0.023 Ohm; Id 94A; TO-247AC; Pd 580W; Vgs +/-30V
- Gate to Source Voltage (Vgs)
- 30V
- Drain to Source Voltage (Vdss)
- 200V
- Continuous Drain Current (ID)
- 94A
- Drain to Source Resistance
- 23mO
- Input Capacitance
- 6.04nF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
20,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Drain to Source Voltage 200V
- Continuous Drain Current 94A
- On-State Resistance 23mΩ
- Power Dissipation 580W
- Gate to Source Voltage +/-30V
The Infineon N-channel Power MOSFET is designed for high-efficiency applications requiring robust performance and reliability. With a maximum drain to source voltage of 200V and a continuous drain current rating of 94A, this MOSFET is ideal for power management in various electronic circuits. Its low on-state resistance of 0.023Ω ensures minimal power loss, making it suitable for demanding applications. Packaged in a TO-247AC case, this component is optimized for through-hole mounting, providing ease of integration into your designs.
This N-channel MOSFET is widely used in power electronics applications where high efficiency and thermal performance are critical. With a maximum voltage rating of 200V and a continuous drain current of 94A, it is suitable for switching and amplifying signals in power supplies, converters, and motor control. Engineers and designers in power management systems primarily utilize this component for its robust performance and reliability.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
20,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.