3. IRFP90N20DPBF
Infineon

IRFP90N20DPBF

Description
Mosfet, Power; N-ch; Vdss 200V; Rds(on) 0.023 Ohm; Id 94A; TO-247AC; Pd 580W; Vgs +/-30V
Gate to Source Voltage (Vgs)
30V
Drain to Source Voltage (Vdss)
200V
Continuous Drain Current (ID)
90A
Drain to Source Resistance
23mΩ
Input Capacitance
6.04nF
Max Junction Temperature (Tj)
175°C
Datasheet
Infineon IRFP90N20DPBF product image

Quantity

20,000 Available
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  • N-channel power MOSFET
  • 200V drain-to-source voltage (VDSS)
  • 90A continuous drain current
  • Low 23mΩ on-resistance
  • 580W maximum power dissipation
  • TO-247 through-hole package, up to 175°C junction

The Infineon IRFP90N20DPBF is an N-channel power MOSFET in a TO-247 through-hole package. It is rated for a 200V drain-to-source voltage, 90A continuous drain current, and a low 23mΩ on-resistance, with a 580W maximum power dissipation and ±30V gate-source rating.

The IRFP90N20DPBF is used as a high-current switching or conduction element in power electronics. Power engineers apply 200V power MOSFETs in switching power supplies, motor drives, DC-DC converters, and industrial power stages that require high current handling and low conduction losses.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

20,000 Available
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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