IRLML2502TRPBF
- Description
- Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
- Gate to Source Voltage (Vgs)
- 12V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 4.2A
- Drain to Source Resistance
- 45mΩ
- Input Capacitance
- 740pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
30,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Unipolar N-MOSFET Design
- Voltage Rating: 20V
- Continuous Drain Current: 4.2A
- Low On-State Resistance: 45mΩ
- Wide Operating Temperature Range: -55°C to 150°C
- Compact SOT-23 Surface Mount Package
The Infineon N-MOSFET transistor is a high-performance unipolar device designed for efficient switching applications. With a voltage rating of 20V and a continuous drain current of 4.2A, this SMD component is ideal for compact electronic designs. Its low on-state resistance of 45mΩ ensures minimal power loss, making it suitable for a variety of applications in consumer electronics and industrial systems. The transistor operates effectively across a wide temperature range from -55°C to 150°C, ensuring reliability in demanding environments.
This N-MOSFET transistor is commonly used in low-voltage switching applications, power management circuits, and signal amplification. It is suitable for use in consumer electronics, automotive systems, and industrial devices. With a maximum drain current of 4.2A and a compact SOT-23 package, it is ideal for efficient and space-saving designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
30,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.