BSS123NH6327XTSA1

• Maximum Drain to Source Voltage: 100 V
• Continuous Drain Current: 190 mA
• On-State Resistance: 6 O
• Input Capacitance: 15.7 pF
• Compact SOT-23 Package with 3 Pins
• Lead-Free & RoHS Compliant

The Infineon BSS123N is a high-performance N Channel Power MOSFET designed for efficient switching applications. With a maximum drain to source voltage of 100 V and a continuous drain current of 190 mA, this component is ideal for various electronic circuits requiring reliable performance. Packaged in a compact SOT-23 format, it is suitable for surface mount technology, making it a versatile choice for modern electronic designs.

The Power MOSFET N Channel is a key component used in automotive and industrial applications. With a drain to source voltage of 100V, continuous drain current of 190mA, and a low on-state resistance of 6O, this MOSFET is ideal for power management and control in various electronic circuits. Its small SOT-23 package and surface mount design make it compact and easy to integrate into circuit boards. Manufactured by Infineon, a trusted leader in semiconductor technology, this Power MOSFET N Channel meets automotive AEC-Q101 standards for reliability and performance. Whether you're designing automotive electronics or industrial control systems, this MOSFET delivers efficient power regulation and switching capabilities.