IRFB4115PBF
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- High Drain to Source Voltage: 150V
- Low On-State Resistance: 11mΩ
- Fast Switching Times: Rise Time 73ns Fall Time 39ns
- High Power Dissipation: 380W
- Lead-Free & RoHS Compliant
The Infineon Single N-Channel HEXFET® Power Mosfet is designed for high-efficiency power management applications. With a robust drain to source voltage rating of 150V and a continuous drain current capability of 104A, this MOSFET ensures reliable performance in demanding environments. Packaged in a TO-220AB case, it features low on-state resistance and fast switching times, making it an ideal choice for power supply circuits, motor drives, and other high-power applications.
This MOSFET is commonly used in high-efficiency power electronics applications, including switch-mode power supplies, motor control, and DC-DC converters. With its low on-resistance and high current handling capability, it is ideal for applications requiring fast switching and high efficiency. Engineers and designers in the electronics and power management sectors often utilize this component for its reliability and performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.