IRFB4127PBF
- Description
- Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power MOSFET - TO-220-3
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 200V
- Continuous Drain Current (ID)
- 76A
- Drain to Source Resistance
- 17mO
- Input Capacitance
- 5.38nF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- Drain to Source Voltage: 200V
- Continuous Drain Current: 76A
- Low On-State Resistance: 20mΩ
- Fast Switching Times: Rise Time 18ns Fall Time 22ns
- High Power Dissipation: 375W
The Infineon Single N-Channel HEXFET® Power Mosfet is designed for high-efficiency power management applications. With a robust 200 V drain to source voltage and a low on-state resistance of 20 mΩ, this MOSFET ensures optimal performance in demanding environments. Housed in a TO-220AB package, it supports through-hole mounting for easy integration into various electronic designs. This component is ideal for applications requiring high current handling and fast switching capabilities.
This MOSFET is commonly used in power management applications, including switching regulators and motor drivers. With its low on-resistance and high current capacity, it is ideal for high-efficiency designs in industrial and consumer electronics. Engineers and designers prefer this component for its reliability and performance in demanding environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.