IRFB4127PBF
- Description
- Single N-Channel 200 V 20 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 200V
- Continuous Drain Current (ID)
- 76A
- Drain to Source Resistance
- 20mΩ
- Input Capacitance
- 5.38nF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
30,000 AvailableNeed this part?
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Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
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- Single N-channel power MOSFET
- 200V drain-source voltage (Vdss)
- Low 20mΩ on-resistance (Rds(on))
- 76A continuous drain current
- 375W power dissipation, 175°C max Tj
- Through-hole TO-220AB package
The Infineon IRFB4127PBF is a single N-channel HEXFET power MOSFET rated at 200V with a low 20mΩ on-resistance. It handles up to 76A of continuous drain current and 375W of power dissipation in a through-hole TO-220AB package rated to a 175°C maximum junction temperature.
Power MOSFETs of this class are used as switching and power-conversion elements in DC-DC converters, motor drives, and inverters. Designers use 200V N-channel MOSFETs in industrial power supplies, motor control, and power-management circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
30,000 AvailableNeed this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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