IRF1404PBF

• Single N-Channel MOSFET, 40V Drain-to-Source Breakdown Voltage
• 4 mΩ on-State Resistance (Rds on max)
• 75A Continuous Drain current; 162A Current rating; 200W Power Dissipation
• 4V Gate Threshold voltage, 20V Maximum Gate-to-Source Voltage
• 5.669nF Input capacitance; 17ns Turn-on and 46ns Turn-Off delay; 190ns rise, 33ns Fall
• TO-220AB 3-Pin Through hole, 2.54mm Lead pitch, -55°C to 175°C, RoHS Compliant and Lead Free

The Infineon IRF1404PBF is a single N-channel HEXFET power MOSFET rated at 40V drain-to-source with 4 mΩ of on-state resistance, supplied in a 3-pin TO-220AB through-hole package. Very low on-resistance at a modest voltage rating is the defining characteristic of this class of MOSFET: conduction loss scales directly with Rds(on), so a 4 mΩ device dissipates far less heat than a higher-resistance part carrying the same current. It handles 75A of continuous drain current with a 162A current rating and 200W of power dissipation, and tolerates ±20V gate-to-source with a 4V threshold. The IRF1404PBF is rated from -55°C to 175°C.

Low-voltage, very-low-resistance MOSFETs in TO-220 are the standard switching element for 12V and 24V high-current systems: automotive load switching and electronic fuses, brushed and brushless motor drives, inverters and power stages for 12V battery systems, battery disconnect and protection circuits, and synchronous rectification in high-current supplies. The 4 mΩ on-resistance of the IRF1404PBF is chosen where conduction loss dominates because the device carries large continuous current at a low duty cycle of switching. Its 175°C junction rating and through-hole TO-220 body suit bolt-down heatsinking in power assemblies rather than surface-mount reflow. Buyers are designers and manufacturers of automotive aftermarket electronics, audio amplifiers, welding and battery equipment, motor controllers, and industrial power converters.