IRF7739L1TRPBF
- Description
- Single N-Channel 40 V 1 mOhm 220 nC HEXFET® Power Mosfet - DirectFET®
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 40V
- Continuous Drain Current (ID)
- 270A
- Drain to Source Resistance
- 700µO
- Input Capacitance
- 11.88nF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- High Drain to Source Voltage: 40V
- Continuous Drain Current: 270A
- Low On-State Resistance: 1mΩ
- Fast Switching Times: Rise Time 71ns Fall Time 42ns
- Wide Operating Temperature Range: -55°C to 175°C
The Infineon Single N-Channel HEXFET® Power Mosfet is designed for high-efficiency power management applications. With a drain to source voltage of 40V and a continuous drain current of 270A, this surface mount device ensures optimal performance in demanding environments. Its low on-state resistance of 1mΩ and fast switching capabilities make it an ideal choice for power conversion and motor control applications. Packaged in a tape and reel format, this component is suitable for automated assembly processes.
This power MOSFET is designed for high-efficiency switching applications, particularly in power management and conversion systems. With a low on-resistance and high current capacity, it is ideal for use in automotive, industrial, and consumer electronics. Engineers and manufacturers leverage its performance characteristics to optimize power delivery in compact designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.