IRF6648TRPBF

Description
Single N-Channel 60 V 7 mOhm 50 nC HEXFET® Power MOSFET - DirectFET®
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
60V
Continuous Drain Current (ID)
86A
Drain to Source Resistance
5.5mΩ
Input Capacitance
2.12nF
Max Junction Temperature (Tj)
150°C
Datasheet
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AS6081
AS9120B
ISO 9001
QMS STD 9090

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