BSS84PWH6327XTSA1
- Description
- Single P-Channel 60 V 8 Ohm 1 nC SIPMOS® Small Signal MOSFET - SOT-323
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 150mA
- Drain to Source Resistance
- 8Ω
- Input Capacitance
- 15.3pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
5,999 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- P-channel small-signal MOSFET
- 60 V drain-to-source voltage rating (Vdss)
- 8 Ω maximum on-resistance (Rds(on))
- 150 mA continuous drain current
- 300 mW power dissipation; up to 150°C junction temperature
- Compact 3-pin SOT-323 surface-mount package; RoHS compliant
The Infineon BSS84PWH6327XTSA1 is a single P-channel SIPMOS small-signal MOSFET in a compact 3-pin SOT-323 package. Part number BSS84PWH6327XTSA1 is rated for a 60 V drain-to-source voltage, 8 Ω on-resistance, and 150 mA continuous drain current, with a ±20 V gate-source voltage rating. It handles up to 300 mW power dissipation across a -55°C to +150°C junction temperature range.
Small-signal P-channel MOSFETs such as the BSS84PWH6327XTSA1 are commonly used as high-side load switches, level shifters, and low-current signal-switching elements. The 60 V rating and compact SOT-323 footprint make it a good fit for power-management, load-switching, and interface circuits in consumer, computing, and industrial boards. Its wide -55°C to +150°C junction range supports demanding thermal environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
5,999 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.