IPB017N10N5LFATMA1
- Description
- IPB017 Series 100 V 180A 313W N-Channel Surface Mount MOSFET TO263-7
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 100V
- Continuous Drain Current (ID)
- 31A
- Drain to Source Resistance
- 1.5mΩ
- Input Capacitance
- 650pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
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- High Drain to Source Voltage: 100 V
- Continuous Drain Current: 31 A
- Low On-State Resistance: 1.7 mΩ
- Fast Switching Times: Turn-On Delay 7 ns Turn-Off Delay 128 ns
- Wide Operating Temperature Range: -55°C to 150°C
The Infineon IPB017 Series is a high-performance N-Channel MOSFET designed for demanding applications requiring efficient power management. With a robust drain to source voltage rating of 100 V and a continuous drain current capability of 31 A, this MOSFET ensures reliable operation in various electronic circuits. Packaged in a compact TO-263 format, it is ideal for surface mount applications, providing excellent thermal performance and power dissipation of up to 313 W.
The IPB017 MOSFET is designed for high-efficiency applications such as power management in industrial and consumer electronics. It is commonly used in switch-mode power supplies, motor drives, and DC-DC converters due to its low on-state resistance and high continuous drain current. Engineers and designers in the fields of power electronics and automotive applications typically utilize this component for its robustness and performance in demanding environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.