IRFB5620PBF

• Drain to Source Voltage: 200V
• Continuous Drain Current: 25A
• Low On-State Resistance: 72.5mO
• Fast Switching Times: Rise Time 14.6ns Fall Time 9.9ns
• High Power Dissipation: 144W
• Lead-Free & RoHS Compliant

The Infineon Trans MOSFET N-CH Si 200V 25A is a high-performance electronic component designed for efficient power management in various applications. This MOSFET features a robust TO-220AB package, making it suitable for through-hole mounting in demanding environments. With a maximum drain to source voltage of 200V and a continuous drain current of 25A, it ensures reliable operation in high-power circuits. Its low on-state resistance and fast switching times make it an ideal choice for applications requiring high efficiency and thermal performance.

The Infineon IRFB5620PBF is a 200V Single N-Channel HEXFET Power MOSFET designed for high efficiency power electronics applications. With a continuous drain current of 25A and a low on-state resistance of 72.5mOhm, this MOSFET is ideal for use in digital audio systems, power supplies, motor controls, and other high-power switching circuits. With RoHS compliance and a TO-220AB package, the IRFB5620PBF delivers reliable performance in a variety of applications.