IRFB5620PBF
- Description
- Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 200V
- Continuous Drain Current (ID)
- 25A
- Drain to Source Resistance
- 72.5mΩ
- Input Capacitance
- 1.71nF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
4,900 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- N-channel MOSFET, 200 V drain-to-source voltage
- 25 A continuous drain current
- On-state resistance of 72.5 m Ohm (max)
- Gate-to-source voltage rating of 20 V
- Maximum power dissipation of 144 W
- Through-hole TO-220AB package, up to 175 C junction temperature
The Infineon IRFB5620PBF is an N-channel silicon MOSFET rated for a 200 V drain-to-source voltage and 25 A continuous drain current, supplied in a through-hole TO-220AB package. It offers a maximum on-state resistance of 72.5 m Ohm and a gate-to-source voltage rating of 20 V. The IRFB5620PBF is rated to a maximum junction temperature of 175 C.
The IRFB5620PBF is used in switching power supplies, DC-DC converters, motor drives, and inverter stages where a rugged 200 V N-channel switch is required. Its low 72.5 m Ohm on-resistance and 25 A rating suit it to power designers building efficient mid-voltage switching circuits. The through-hole TO-220AB package supports heatsinking for higher-power applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
4,900 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.