BSS84PH6327XTSA2
- Description
- Transistor: P-MOSFET; unipolar; -60V; -0.17A; 8ohm; 0.36W; -55+150 deg.C; SMD; SOT23; AEC-Q100
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 170mA
- Drain to Source Resistance
- 12O
- Input Capacitance
- 15pF
- Datasheet
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- Maximum Drain to Source Voltage: 60V
- Continuous Drain Current: 170mA
- On-State Resistance: 8Ω
- Power Dissipation: 360mW
- Fast Switching Times: Rise Time 16.2ns Turn-On Delay Time 6.7ns
The Infineon BSS84P is a high-performance P-MOSFET transistor designed for unipolar applications. With a maximum drain to source voltage of 60V and a continuous drain current of 170mA, this surface mount device is ideal for various electronic circuits requiring efficient power management. Its compact SOT-23 package ensures easy integration into space-constrained designs while maintaining high reliability across a wide temperature range from -55°C to 150°C.
The P-MOSFET is commonly used for switching and amplification in various electronic applications, particularly in automotive and industrial circuits. Its ability to handle up to 60V and 170mA makes it suitable for power management tasks. Designers and engineers in the electronics field utilize this component for its low on-state resistance and compact size in SMD packaging.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.