CSD19536KTT
- Description
- 100-V, N-Channel NexFET™ Power MOSFET, single D2PAK, 2.4 mOhm 3-DDPAK/TO-263 -55 to 175
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 100V
- Continuous Drain Current (ID)
- 200A
- Drain to Source Resistance
- 2mO
- Input Capacitance
- 12nF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- Drain to Source Voltage: 100V
- Continuous Drain Current: 200A
- Low On-Resistance: 2.4mΩ
- Power Dissipation: 375W
- Fast Switching Times: Rise Time 8ns Fall Time 6ns
- Surface Mount TO-263 Package
The Texas Instruments 100-V N-Channel NexFET™ Power MOSFET is designed for high-efficiency power management applications, offering exceptional performance in a compact TO-263 package. With a continuous drain current rating of 200A and a low on-resistance of 2.4 mΩ, this MOSFET ensures minimal power loss and optimal thermal performance. It operates effectively across a wide temperature range from -55°C to 175°C, making it suitable for demanding environments. This device is ideal for use in power supplies, motor drives, and other high-current applications.
The 100-V, N-Channel NexFETâ„¢ Power MOSFET is commonly used in power management applications such as DC-DC converters, motor drives, and power supplies. Its low on-resistance and high current rating make it ideal for efficient power switching in various electronic systems. Engineers and designers in the electronics industry utilize this component for its reliable performance and thermal stability in demanding environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.