CSD16340Q3
- Description
- 25-V, N-Channel NexFET™ Power MOSFET, single SON 3 mm x 3 mm, 5.5 mOhm 8-VSON-CLIP -55 to 150
- Gate to Source Voltage (Vgs)
- 10V
- Drain to Source Voltage (Vdss)
- 25V
- Continuous Drain Current (ID)
- 60A
- Drain to Source Resistance
- 4.3mΩ
- Input Capacitance
- 1.35nF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
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- Low On-Resistance of 4.5 mΩ
- High Continuous Drain Current Rating of 60 A
- Wide Operating Temperature Range: -55°C to 150°C
- Fast Switching Times with Rise Time of 16.1 ns
- Surface Mount VSON Package for Space-Saving Designs
The Texas Instruments 25-V N Channel NexFET™ power MOSFET is designed for high-efficiency power management applications. With a compact 3 mm x 3 mm SON package, this MOSFET delivers exceptional performance with a low on-resistance of 4.5 mΩ and a continuous drain current rating of 60 A. Operating within a wide temperature range from -55°C to 150°C, it is ideal for demanding environments where reliability and efficiency are paramount.
The 25-V, N channel NexFET™ power MOSFET is used in high-performance electronic applications requiring efficient power management. With its low on-resistance and high current carrying capability, it’s ideal for switching applications in power supplies and motor control. Designers and engineers in industries like automotive, industrial, and consumer electronics commonly utilize this MOSFET for reliable and compact power solutions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.