NSR02100HT1G
- Description
- 200 mA, 100 V, Schottky Barrier Diode 100V
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Forward Current: 200 mA
- Max Reverse Voltage: 100 V
- Max Forward Surge Current: 2 A
- Low Peak Reverse Current: 150 nA
- Capacitance: 4 pF
- Operating Temperature Range: -55°C to 150°C
The onsemi 200 mA, 100 V Schottky Barrier Diode is designed for high-efficiency applications requiring fast switching and low forward voltage drop. This diode is ideal for power management and rectification in various electronic circuits. With its compact size and robust performance, it is suitable for use in consumer electronics, automotive, and industrial applications.
The 200 mA, 100 V, Schottky Barrier Diode 100V is commonly used for efficient rectification in power supply applications and voltage clamping. Its low forward voltage drop and fast switching capabilities make it ideal for applications in consumer electronics, automotive systems, and industrial equipment. This diode is suitable for engineers and designers looking for reliable performance in compact circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.