BC847CW,115
- Description
- Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
- Collector Emitter Saturation Voltage
- 200mV
- Collector Emitter Voltage (VCEO)
- 45V
- hFE Min
- 420
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
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- NPN Polarity for Versatile Applications
- Collector Emitter Breakdown Voltage: 50V
- Max Collector Current: 100mA
- Collector Emitter Saturation Voltage: 200mV
- High hFE Min: 420 for Enhanced Gain
- Power Dissipation: 200mW
The Nexperia Small Signal Bipolar Transistor is a high-performance NPN transistor designed for a variety of applications requiring efficient signal amplification and switching. With a maximum collector current of 100mA and a collector emitter breakdown voltage of 50V, this transistor is ideal for low-power applications. Packaged in a compact SOT-323 case, it ensures reliable performance even in demanding environments with an ambient temperature range up to 150°C.
The Small Signal Bipolar Transistor is primarily used for amplifying or switching electronic signals in various applications. It is capable of handling collector currents up to 100 mA and can operate efficiently with a collector emitter breakdown voltage of 50 V. Common users include electronics engineers and manufacturers of consumer electronics, where space and thermal efficiency are crucial.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.