BC807-40,215

• PNP Polarity for Versatile Applications
• Collector Emitter Breakdown Voltage: -45V
• Max Collector Current: -500mA
• Collector Emitter Saturation Voltage: -700mV
• High hFE Min: 250 for Enhanced Gain
• Power Dissipation: 250mW for Efficient Operation

The Nexperia Small Signal Bipolar Transistor is a high-performance PNP silicon transistor designed for efficient signal amplification and switching applications. With a maximum collector current of 0.5A and a collector emitter breakdown voltage of 45V, this transistor is ideal for various electronic circuits requiring reliable performance. Packaged in a compact TO-236AB format, it ensures easy integration into space-constrained designs while maintaining high thermal stability with a maximum operating temperature of 150°C.

The Small Signal Bipolar Transistor is commonly used in amplification and switching applications in electronic circuits. With a maximum collector current of 0.5A and a collector-emitter breakdown voltage of 45V, it is ideal for low-power analog systems. This component is widely used by electronics engineers and hobbyists for its reliable performance in various consumer and industrial applications.