BC807-40,215
- Description
- Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
- Collector Emitter Saturation Voltage
- -700mV
- Collector Emitter Voltage (VCEO)
- -45V
- hFE Min
- 250
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
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- PNP Polarity for Versatile Applications
- Collector Emitter Breakdown Voltage: -45V
- Max Collector Current: -500mA
- Collector Emitter Saturation Voltage: -700mV
- High hFE Min: 250 for Enhanced Gain
- Power Dissipation: 250mW for Efficient Operation
The Nexperia Small Signal Bipolar Transistor is a high-performance PNP silicon transistor designed for efficient signal amplification and switching applications. With a maximum collector current of 0.5A and a collector emitter breakdown voltage of 45V, this transistor is ideal for various electronic circuits requiring reliable performance. Packaged in a compact TO-236AB format, it ensures easy integration into space-constrained designs while maintaining high thermal stability with a maximum operating temperature of 150°C.
The Small Signal Bipolar Transistor is commonly used in amplification and switching applications in electronic circuits. With a maximum collector current of 0.5A and a collector-emitter breakdown voltage of 45V, it is ideal for low-power analog systems. This component is widely used by electronics engineers and hobbyists for its reliable performance in various consumer and industrial applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.