BC807-40,215
- PNP Polarity for Versatile Applications
- Collector Emitter Breakdown Voltage: -45V
- Max Collector Current: -500mA
- Collector Emitter Saturation Voltage: -700mV
- High hFE Min: 250 for Enhanced Gain
- Power Dissipation: 250mW for Efficient Operation
The Nexperia Small Signal Bipolar Transistor is a high-performance PNP silicon transistor designed for efficient signal amplification and switching applications. With a maximum collector current of 0.5A and a collector emitter breakdown voltage of 45V, this transistor is ideal for various electronic circuits requiring reliable performance. Packaged in a compact TO-236AB format, it ensures easy integration into space-constrained designs while maintaining high thermal stability with a maximum operating temperature of 150°C.
The Small Signal Bipolar Transistor is commonly used in amplification and switching applications in electronic circuits. With a maximum collector current of 0.5A and a collector-emitter breakdown voltage of 45V, it is ideal for low-power analog systems. This component is widely used by electronics engineers and hobbyists for its reliable performance in various consumer and industrial applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.