PBHV8540T,215

Description
NPN Transistor, 500 mA, 400 V, 3-Pin SOT-23
Collector Emitter Voltage (VCEO)
400V
Transition Frequency
30MHz
hFE Min
80
Datasheet
Nexperia PBHV8540T,215 product image

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  • High Collector Emitter Breakdown Voltage: 400 V
  • Maximum Collector Current: 500 mA
  • Transition Frequency: 30 MHz
  • Power Dissipation: 300 mW
  • Lead Free and RoHS Compliant

The Nexperia NPN Transistor is a high-performance component designed for various electronic applications requiring reliable switching and amplification. With a maximum collector current of 500 mA and a collector emitter breakdown voltage of 400 V, this transistor is ideal for high-voltage circuits. Packaged in a compact 3-pin SOT-23 format, it ensures efficient surface mount integration while maintaining excellent thermal performance across a wide temperature range from -55°C to 150°C.

The Nexperia NPN Transistor is commonly used in amplification and switching applications, offering high voltage and current handling capabilities. With a collector emitter breakdown voltage of 400 V and a maximum collector current of 500 mA, it is suitable for various electronic devices including power amplifiers and signal processing circuits. This transistor is favored by engineers and designers seeking reliability in performance for commercial and industrial applications.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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