PBSS4350T,215
- Description
- Bipolar junction transistor, NPN, 2 A, 50 V, SMD, SOT-23, PBSS4350T, 215
- Collector Emitter Voltage (VCEO)
- 50V
- Transition Frequency
- 100MHz
- hFE Min
- 300
- Datasheet
Quantity
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- NPN Bipolar Junction transistor, Single Element
- 50 V Collector-Emitter (VCEO), Collector-Base (VCBO), and Breakdown Voltage
- 2 A Maximum Collector Current
- Minimum hFE of 300
- 100 MHz Transition Frequency / Gain-Bandwidth Product
- SOT-23 package, Surface mount, Tape and Reel
- -65 C to 150 C; Lead-free, RoHS compliant, REACH SVHC-Free
The Nexperia PBSS4350T,215 is an NPN bipolar junction transistor rated 50 V collector-emitter and 2 A maximum collector current, with a minimum DC current gain of 300 and a 100 MHz transition frequency. Emitter-base voltage is rated 5 V. PBSS4350T,215 is supplied in a SOT-23 surface-mount package on tape and reel, is lead-free and RoHS compliant, REACH SVHC-free, and rated -65 C to 150 C.
A 2 A NPN transistor in a SOT-23 body is a low-saturation switching device used where a small-signal package must carry more current than a general-purpose part allows. Typical roles are relay and solenoid drivers, LED strings, DC-DC converter pre-drivers, load switches, and power-supply sequencing. The 300 minimum current gain lets a logic-level output drive the base directly through a resistor. Buyers are consumer electronics, industrial control, and automotive accessory designers building compact discrete drive stages.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.