PBSS5350Z,135
- Description
- Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
- Collector Emitter Voltage (VCEO)
- 50V
- Transition Frequency
- 100MHz
- Datasheet
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Maximum Collector Current: 3A
- Collector Emitter Breakdown Voltage: 50V
- Transition Frequency: 100M Hz
- Power Dissipation: 2W
- Surface Mount SOT-223 Package
- Lead Free and RoHS Compliant
The Nexperia PNP Power Bipolar Transistor is designed for high-efficiency applications requiring reliable performance and robust power handling. With a maximum collector current of 3A and a collector emitter breakdown voltage of 50V, this transistor is ideal for various electronic circuits. Housed in a compact SOT-223 package, it ensures efficient thermal management and is suitable for surface mount technology. This component is perfect for use in power amplifiers, switching applications, and other demanding environments.
The Power Bipolar Transistor from Nexperia is commonly used in power amplification and switching applications. With a maximum collector current of 3A and a breakdown voltage of 50V, it is ideal for a variety of electronic circuits. This transistor is typically utilized by engineers and designers in consumer electronics and industrial equipment requiring compact, reliable components.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.