PDTC114YT,215
- Description
- Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
- Collector Emitter Voltage (VCEO)
- 50V
- hFE Min
- 100
- Datasheet
Quantity
90,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- NPN Polarity for Versatile Applications
- Maximum Collector Emitter Voltage: 50V
- Max Power Dissipation: 250mW
- High Current Gain: hFE Min 100
- Compact SOT-23 Package for Space Efficiency
- RoHS Compliant for Environmental Safety
The Nexperia Small Signal Bipolar Transistor NPN TO-236AB is designed for efficient switching and amplification in a variety of electronic applications. With a maximum collector emitter voltage of 50V and a current rating of 0.1A, this transistor is ideal for low-power circuits. Packaged in a compact SOT-23 form factor, it ensures space-saving integration while delivering reliable performance. This component is suitable for use in consumer electronics, automotive systems, and industrial applications.
The Nexperia Small Signal Bipolar Transistor is commonly used in amplifying and switching applications in various electronic devices. It is designed for low-power operations, with a collector emitter voltage rating of 50V and continuous current capabilities of 0.1A. This transistor is typically utilized by engineers and hobbyists in circuits requiring efficient signal processing.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
90,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.